Multi-zone shower head for drying single semiconductor substrate

ABSTRACT

A shower head processes a wafer with a plate having a plurality of nozzles positioned thereon, each of the nozzles assigned to one of a plurality of processing zones for the wafer; and a manifold assembly coupled to each of the nozzles to control one or more of the nozzles as a group in each processing zone.

This application is a continuation of U.S. Pat. application Ser. No.11/032,852, filed Jan. 1, 2005, hereby incorporated by reference.

BACKGROUND

This invention relates to systems and methods for processingsemiconductor wafers.

In semiconductor fabrication, various layers of insulating, conductingand semi-conducting materials are deposited to produce a multilayersemiconductor device. Using various fabrication techniques such ascoating, oxidation, implantation, deposition, epitaxial growth ofsilicon, lithography, etching, and planarization, the layers arepatterned to form elements such as transistors, capacitors, andresistors. These elements are then interconnected to achieve a desiredelectrical function in an integrated circuit (IC) device.

In many operations, residual unwanted materials such aspost-etch/post-strip chemicals and slurry particles accumulate on thesurface of a wafer. If left on the surface of the wafer for subsequentfabrication operations, these unwanted residual materials and particlesmay cause, among other things, defects such as scratches on the wafersurface and inappropriate interactions between metallization features.In some cases, such defects may cause devices on the wafer to becomeinoperable.

To illustrate, fabrication operations such as plasma etching, strippingand chemical mechanical polishing (CMP) may leave unwanted residuals onthe surface of the wafer. These unwanted residuals may be removed usingwater washing, chemical washing, sonic washing (for example Megasonicand ultrasonic), and brush cleaning with deionized (DI or DIW) water, ora separate post-CMP cleaning. The post-CMP step is typically achieved bymechanical brush cleaning, using a polyvinyl alcohol (PVA) brush orsponge and DI water, or potassium or ammonium hydroxide as the cleaningagent. Other surface preparation processes can include chemicalprocesses using various liquid chemicals.

After the cleaning operation, a rinse is applied with DI water and adrying process is performed. One of the substrate drying processesconventionally known in the art is a spin dry process for rotating asubstrate at high speeds to spin off water from the surface of thesubstrate by centrifugal force in a single-wafer type substrateprocessing apparatus for processing substrates one by one.

One purpose of drying the substrates is to remove water on thesubstrates after cleaning. Currently several drying methods have beenused in electronic component industry. The methods include a spin-rinsedry method, a hot water slow pull method, a Marangoni-type process, andan isopropyl alcohol (IPA) process.

FIG. 1 shows an exemplary prior art of typical spinning apparatus. Awafer 10 is positioned above a wafer chuck 12, both of which arecontained in a shroud 14. The chuck 12 is connected to one end of aspindle shaft 19, while the other end of the spindle shaft 19 isconnected to a pulley 20. The shaft 19 is centered in a spindle housing18 using a plurality of spindle bearings 16. The pulley 20 is driven bya belt 22, which in turn is connected to a motor pulley 24. The motorpulley 24 is connected to a motor 26 which, when activated, rotates thepulley 20 to rotate the shaft 19 and the chuck 12 to spin the wafer 10resting above the chuck 12.

The spin-rinse dryer uses centrifugal forces to remove water fromsubstrate surfaces. However, spin-rinse dryer is known to have problemssuch as water spotting, static electric charge build-up, andstress-induced substrate damage due to high speed spinning about 2500RPM. In the hot water slow pull method, the substrates are immersed in ahot water bath, which is heated to 80-90° C., and then slowly pulledfrom the bath. When a substrate is pulled from the bath, a thin waterfilm is formed on the surface of the substrate. Then, the thermal energystored in the substrate evaporates the thin water film. For successfulevaporation, the rate at which the substrate is separated from the bathmust be matched to the evaporation rate. The hot water process hasseveral shortcomings. When the substrate has a non-homogeneous surface,partly hydrophobic and partly hydrophilic, the substrate is likely tohave watermarks or stains thereon. Further, condensation of water vaporon the substrate after the substrate is pulled from the hot water mayproduce watermarks or stains on the substrate.

Since spin dryers or IPA vapor dryers cannot completely removewatermarks that occur on a wafer surface or between patterns, Marangonidryers have been developed. The Marangoni dryer uses a differencebetween surface tenses of the IPA and water. The Marangoni-type processinvolves the introduction of a polar organic compound which dissolves inthe liquid and thereby reduces the surface tension of the liquid. U.S.Pat. No. 6,027,574, entitled “METHOD OF DRYING A SUBSTRATE BY LOWERING AFLUID SURFACE LEVEL”, shows a Marangoni-type process. According to theMarangoni principle, fluid flows from low surface tension region to highsurface tension region. In the Marangoni-type process, while thesubstrate is separated from the bath containing water that is at roomtemperature, the water is driven away from the substrate because of theMarangoni effect. To avoid condensation of water vapor on the surface ofthe substrate, the Marangoni-type process does not use hot water. Afterwafers are rinsed out by de-ionized water, the IPA vapor is fed to anupper interior space of a rinsing bath and the DI water is slowlywithdrawn. Thus, the water is eliminated from a wafer surface. When theDI water is completely drained, the nitrogen of high temperature is fedinto to evaporate the DI water remaining on the wafer surface. If theevaporated DI water and residues including particles are not fullyissued out, they can cause the irregular liquid flow (turbulence) in therinsing bath together with the nitrogen, so that the wafer surface isnot uniformly dried and the water remains at a portion contacting with awafer guide. In addition, since the Marangoni dryer cannot fundamentallyprevent oxygen from reacting on the wafer, it cannot suppress formationof an oxide layer.

As noted in U.S. Pat. No. 6,625,901, several issues arise withconventional Marangoni-type process. First, the drying speed of theprocess is low, because the substrate is dried at room temperature, andthe chamber is purged of the remaining IPA vapor for an extended periodof time (3-5 minutes) after being removed from the water. Accordingly,drying cost is high. Second, although room temperature water is used,there is still a condensation problem during and after the separation ofthe substrate from the water. Water vapor condenses on the substrate andforms micro droplets that leave a residue behind, causing defects insubsequent manufacturing processes. Fourth, purging of IPA while thesubstrate is dried in the chamber may cause condensation of water vapor.

SUMMARY

In one aspect, a multi-zone shower head includes a plate having zones ofplurality nozzles positioned thereon, each of the nozzle zone assignedto one or more of a plurality of processing zones for the wafer; and amanifold assembly coupled to the pressure regulator or MFC to controlone or more of the nozzle zones as a group in each processing zone.

Implementations of the above aspect may include one or more of thefollowing. The multi-zone shower head plate assembly can include anupper plate having plurality of input cavity chambers for eachsubsequence nozzle zone of lower plate; and a lower plate havingplurality of nozzle zones mating with each upper chamber. Eachprocessing zone can provide an aqueous vapor flow, a gas, a gas mixtureor a compressed liquid. A plurality of control device can be used withthe manifolds to control volume, flow rate, and pressure of eachprocessing zone. The processing zones can include a plurality ofnitrogen and IPA vapor zones. The nozzles can be spaced apart from eachother between approximately 0.06 inch and 0.25 inch (preferably 0.010inch). Each nozzle can be angled outwardly from center of waferapproximately between 0 and 45 degrees (preferably 20 degrees) and canhave a nozzle diameter approximately between 0.01 inch and 0.06 inch(preferably 0.015 inch). Each zone can be separated by a distanceapproximately between 0.5 inch and 2.00 inches (preferably 1 inch). Theplate surface can be a flat surface, a concave surface or a convexsurface. The processing zones can be shaped as concentric rings,rectangular rings, linear rings, or radial rings. Alternatively, theprocessing zones can be circular zones, square zones, triangular zones,rectangular zones or linear zones. An outer processing zone can be usedto dry a wafer edge (with less than 20 nozzles in one embodiment). Arotating platform can be used to rotate the wafer. The platform cangenerate a centrifugal force during wafer spinning to urge an aqueoussolution to move toward a wafer edge. The aqueous solution can be DIWand can be rinsed to remove any chemical residues on the wafer. Theprocessing zones can flow N2/IPA mixture or heated nitrogen during waferrotation to evaporate residual thin film on the wafer and to preventwater marks on the wafer. An actuator such as a motor or an air actuatorcan be used to move the shower head assembly plate up/down or rotateleft/right or pivot up/down the plate (preferably the shower headassembly is moved vertically in an up/down manner). The shower headassembly plate can be concentric or non-concentric with the wafer or theassembly plate can be concentric or non-concentric with the platform torotate the wafer. Additional nozzle head(s) can access second (backside) sides of the wafer for additional processing.

In another aspect, a system for fabricating a wafer having first andsecond sides includes a platform adapted to receive and rotate thewafer; a shower head positioned above the first side (front side), theshower head having plurality of nozzle zones positioned thereon toprocess the first side (front side); and second nozzle heads coupled tothe platform to access the second side (back side) of the wafer.

Implementations of the above apparatus can include one or more of thefollowing. A drive assembly can actuate the platform. A first bowl cancollect material from the first head and a second bowl can collectmaterial from the second head. A moveable shroud is used to load/unloadthe wafer and contain material from one or more of the heads. Thenozzles can discharge air, gas, or a mixture thereof. The nozzles canalso discharge a liquid material, a chemical material or a gaseousmaterial. The wafer can be positioned offset from the shower head.

The shower head can be fabricated from a variety of material and surfacefinishing. The air nozzles can be spaced from 0.06+0.25″ (preferably0.1″). The angle of nozzle is tilting from 0 to 45 degree (15 degreepreferred). The nozzle size is from 0.01 to 0.06″ (preferably 0.015″).The spacing of each zone is from 0.5 to 2.0″ (preferably 0.9″). Thesurface of the shower head is not limited to a flat surface; it can bemade as concave or convex surface. The shower head can arrange thenozzles in concentric rings, linear spacing radically or combined ofboth designs. The outer edge zone can be used to dry wafer edge.

In a system embodiment, the shower head is located at the top of thesubstrate spinning apparatus, and can move up/down at the appropriateposition by air cylinder or motor. A 0.10 to 2 inch gap position betweenthe shower head and the wafer for each required processing operation canbe controlled by motor or air cylinder (preferably 0.25 inch). Theshower head can move vertically above the wafer, and alternatively canbe rotated and pivoted up and down, and can be rotated side way as wellas moved up and down. The shower can be located concentric or not to thewafer spinning apparatus. Its also can located concentric to waferspinning apparatus but still have the wafer offset from the spinningapparatus.

In another implementation where the processing zones are multi-airzones, the shower head with multi-air zones control an aqueous vaporflow, gases, gas mixture and wafer spinning apparatus to perform frontwafer processes. Various combination of gas, gas mixture or liquid canbe flowed through the shower head zones. The systems of manifold andcontrol device enable a precise control of volume, flow rate, andpressure of each zone. The shower head with multi-air zones controllednitrogen/IPA or an aqueous vapor flow and wafer rotation apparatuses todry front wafer and rotation arm with attached air nozzle(s) to dry thebackside of the wafer. Combining the force from each circularnitrogen/IPA vapor air zones and the centrifugal force of the spinningwafer urges DIW or other aqueous based to move toward the edge of wafer.

In an exemplary Shower Head Vapor Dry (SHVD) process, DIW is rinsed toremove any chemical residues on wafer from previous cleaning processes.As required for surface treatments, nitrogen/IPA or an aqueous vapor canbe used to coat the surface of wafer as (heated) DIW or otheraqueous-based solutions floods the wafer surface for wetting the wafersurface. A controlled wafer rotation is performed and the multi-zoneshower head applies N2/IPA vapors, starting from a center processingzone and moving to outer zones. The N2/IPA assists in drying the waferusing the Marangoni effect. The resulting surface tension gradientpushes water away from wafer center as it is rotated. Each circular airzone in shower head can continue to flow N2/IPA mixture or heatednitrogen at one or more wafer rotation speed(s) to evaporate residualthin films of liquid solutions on the wafer to prevent the formation ofwater marks on the wafer. This process save time, lower the cost foreach wafer by eliminating the need for post-clean and batch IPA dry onporous and hydrophobic film of copper/low-k interconnects wafer withoutleaving water marks.

The foregoing methods and apparatuses for processing semiconductorwafers can be used in conjunction with other semiconductor processes aspost-CMP clean/dry, Dry/wet Post-Etch Residue cleans (Polymer Removal),Photoresist Removal and surface preparation (FEOL & BEOL), PrePhotoLithography, Pre-Deposition clean and dry, Back Side Metals Clean, BackSide Films Etch (Front side and/or backside), Pre-Epi Clean, amongothers. Such a Shower Head Vapor Dryer can be used with an integratedchamber and the system does not required transferring wafer from cleanmodule to dry module, improving throughput and reduce wafer stress,wafer contamination and defectives.

One or more of the following advantages may be achieved. Water marks andwafer stress on the wafer are virtually eliminated using the multi-zoneshower head and using centrifugal forces exerting during the slowspinning to dry wafer (5 to 600 RPM). The system efficiently dries thewafer after fabrication operations that leave unwanted residue on one orboth surfaces of the wafer. The improved wafer cleaning/drying minimizesthe undue costs of discarding wafers having inoperable devices.

Other aspects and advantages of the present invention will becomeapparent from the following detailed description, taken in conjunctionwith the accompanying drawings, illustrating by way of example theprinciples of the present invention.

BRIEF DESCRIPTION OF THE DRAWINGS

The present invention will be readily understood by the followingdetailed description in conjunction with the accompanying drawings. Tofacilitate this description, like reference numerals designate likestructural elements.

FIG. 1 shows an exemplary prior art typical apparatus.

FIG. 2 illustrates an exemplary multi-zone shower-head system.

FIG. 3 illustrates the shower head system of FIG. 2 in a lower positionfor wafer drying process, among others.

FIG. 4 illustrates the shower head system of FIG. 2 in an upper positionfor wafers load/unload, among others.

FIG. 5 illustrates the shower head system with the shower head locatedoffset from a wafer center.

FIG. 6 shows a cross-sectional view of an exemplary 200 mm shower headassembly.

FIG. 7 shows a cross-sectional view of an exemplary 300 mm shower headassembly.

FIGS. 8A-8B illustrate a first exemplary circular air zone patterns anda cross-sectional view of the head that generates the pattern of FIG.8A.

FIGS. 9-11 illustrate exemplary radial air zone patterns.

FIGS. 12A-12B illustrates exemplary systems for controlling theoperation of the multi-zone shower head of FIG. 2.

FIG. 13 illustrates an exemplary drying process for a wafer using themulti-zone shower head of FIG. 2.

FIG. 14 illustrates an exemplary process for drying wafers.

FIG. 15 illustrates an exemplary embodiment of a modular fabricationplatform having one or more cleaning/drying modules.

DESCRIPTION

Referring now to FIGS. 2-4, an exemplary multi-zone shower head assembly200 for processing wafers is shown. FIG. 2 illustrates an exemplarymulti-zone shower-head system; FIG. 3 illustrates the shower head systemof FIG. 2 in a processing position for drying wafer, among others; FIG.4 illustrates the multi-zone shower head system of FIG. 2 in a upperposition for wafer load/unload and among others; and FIG. 5 illustratesthe shower head system of FIG. 2 with the shower head located offsetfrom a wafer center.

Turning now to FIG. 2, the multi-zone shower head assembly 200 ismoveably positioned above a wafer 100 using an actuator 210 that isconnected to the head assembly 200 through an arm 212. The shower headassembly 200 includes a cover 214 that houses a plurality of air linesand fittings to each zone 230A, top plate 201 and bottom plate 203, asshown in more detail in FIGS. 6-7.

The wafer 100 has first and second sides 101 and 102 (in this case thefront and back wafer sides) and is mounted on a platform 104 adapted tosecurely receive and rotate the wafer. FIG. 2 shows the assembly 200 atan upper position to enable both sides of the wafer 100 to be accessibleby instruments such as process heads 160 and back side wafer dryingnozzle 170 in FIG. 4, for example. FIG. 3 shows the assembly 200 at aprocessing position proximal to the wafer 100.

FIG. 3 illustrates the multi-zone shower head system of FIG. 2 in aclosed position for drying wafer processes at a distance 213 above thewafer 100, while FIG. 4 illustrates the multi-zone shower head system ofFIG. 2 in a upper position for wafer load/unload or other processes. Asshown in FIG. 4, the apparatus 200 has a hollow center to allow firstand second process heads 160 and arm 170 mounted on the platform 104 toaccess the first and second sides 101-102 of the wafer 100. In oneembodiment, the first head 160 is positioned above the top side of thewafer 100 and the second head 172 is positioned below the bottom side ofthe wafer 100. The platform 104 allows nozzles and process heads toreach wafer from both sides without restriction.

In the embodiment of FIGS. 2-4, the wafer is a 300 millimeter wafer thatseats above the inner housing 130. In yet another embodiment shown inFIG. 5, the wafer 100 is placed at an offset 215 from a spindle center.

FIGS. 6-7 are cross sectional views of two embodiments of the multi-zoneshower head 200. The shower head 200 is made up of top and bottom plates201 and 203 and is typically fabricated from PPS, PET or Teflon. Theshowerhead 200 may alternatively be fabricated from ceramic or othermaterials for use in processes environment applications. The top andbottom plates 201 and 203 are secured to each other using a plurality ofbolts.

In the plate 201, one or more liquid inlet tube feed through 220A. Inone embodiment, the inlet tube feed through 220A is a cylinder that goesthrough both plates 201 and 203. Also positioned on the plate 201 is aplurality of gaseous fluid inlet fittings 230A that define a pluralityof air chambers. In one embodiment, each inlet fitting 230A has aseparate chamber 216 guide the gaseous fluid through narrow gap 230Cfrom 0.005 to 0.040 inch (preferably about 0.015 inch) of the showerhead200, this narrow gap has radial blocked segment to allow better flowdistribution to the below chamber 230B of bottom plate 203.Additionally, multi-zone shower head assembly has a plurality of O-ringreceptacles 234 between top plate 201 and 203. The O-ring receptacles234 are adapted to receive O-rings 236 to isolate each zone from itsneighbors.

The bottom plate 203 has a corresponding liquid inlet tube feed through220B that cooperates with the inlet tube 220A. The inlet tube feedthrough 220B terminates in an angle cut 221 about 30 degree and can beused to feed liquid lines for flooding wafer during wafer drying.

In combination, plates 201 and 203 form a multi-zone shower headassembly 200 having a plurality of hole or nozzle zones 218 passingthrough the showerhead 200. Generally, the holes are disposed in a polararray as shown in FIG. 8A. The zone 218 may alternatively be disposed inother patterns or randomly disposed throughout the perforated bottom ofplate 203. The number of nozzle zones 218 and the nozzlediameters/angulations are typically selected to provide flow uniformlyof gases passing through the showerhead 200.

FIGS. 8A-8B illustrate a first exemplary circular air zone pattern and across-sectional view of the head that generates the pattern of FIG. 8A.In this embodiment, six concentric air zones are provided by the nozzles231B of FIG. 8B. The spacing between the concentric air zones may beregular or may vary, as shown by the area between zone 5 and zone 6. Invarious embodiments, the nozzles 231B of FIG. 8B are tilted at an angleoutward 251 and the nozzles can be spaced apart from each other betweenapproximately 0.06 inch and 0.25 inch (preferably about 0.1 inch). Eachnozzle can be angled approximately between 0 and 45 degrees (preferablyabout 20 degree) and can have a nozzle diameter approximately between0.01 inch and 0.06 inch (preferably 0.015 inch). Each zone can beseparated by a distance approximately between 0.5 inch and 2.0 inch.(Preferably about 1 inch). In one embodiment to serve 200 mm wafer(shown in FIG. 8A), zone 1 has 1 nozzle, zone 2 has 24 nozzles, zone 3has 86 nozzles, zone 4 has 150 nozzles, zone 5 has 212 nozzles, and zone6 has 240 nozzles.

FIGS. 9-11 illustrate three additional exemplary radial air zonepatterns. In the embodiment of FIG. 9, three radial air zones areprovided by the nozzles 231B at predetermined angles 251. In theembodiment of FIG. 10, six radial air zones are provided by the nozzles231B at predetermined angles 251. In the embodiment of FIG. 11, nineradial air zones are provided by the nozzles 231B at predeterminedangles 251. The spacing between the air zones may be regular or mayvary. The processing zones can include a plurality of nitrogen and IPAvapor air zones. The nozzles can be spaced apart from each other betweenapproximately 0.06 inch and 0.25 inch. Each nozzle can be angledapproximately between 0 and 45 degrees and can have a nozzle sizeapproximately between 0.01 inch and 0.04 inch. Each zone can beseparated by a distance approximately between 0.5 inch and 1.5 inch. Theplate surface can be a flat surface, a concave surface or a convexsurface. The processing zones can be shaped as concentric rings,rectangular rings, linear rings, or radial rings. Alternatively, theprocessing zones can be circular zones, square zones, triangular zones,rectangular zones or linear zones. An outer processing zone can be usedto dry a wafer edge.

In one embodiment shown in FIG. 12A, a first manifold 310 distributes aninput gas 315 such as heated nitrogen to a manifold and control pressureregulators or MFC 311. Correspondingly, a second manifold 320distributes an input vapor 313 such as N2/IPA mixture, or suitablevapor/mist to a manifold and control pressure regulator or MFC 311. Thesupply lines 313 and 315 are provided to an array of three-way valves312. The valves 312 are controlled by a controller or computer and areselectively turned on to provide the gas to selected zone(s) on thewafer at selected times as needed.

Turning now to FIG. 12B, an exemplary system for controlling theoperation of one example of the heads 160 or 170 is shown. As shown inFIG. 12B, DIW or chemical can be provided to predetermined zones on topof the wafer 100 through nozzles 350, while cleaning/drying chemical canbe provided to predetermined zones on the bottom of the wafer 100through nozzles 360.

FIG. 13 illustrates an exemplary drying process for a wafer using theshower head of FIG. 2. As illustrated therein, when the wafer 100 isspun, centrifugal force pushes the DIW 370 in a particular nitrogen andIPA zone 372 from the wafer center 368 toward the edge 380 of the wafer100.

In drying a substrate, the drying apparatus increases the wet ability ofthe substrates or wafers and promotes the separation of water or fluidfrom the substrate and dries the substrate by transferring of thermalenergy to the substrate. Since the N2/IPA vapor supplied to theinterface between the substrate and the fluid has lower surface tensionthan the fluid does, the N2/IPA vapor dissolved on the top surface ofthe fluid in the bath promotes the removal of the fluid from thesubstrate while the substrate is pulled from the fluid in the bath. Thatis, the surface tension difference between the bulk fluid and theN2/IPA/fluid mixture promotes the separation of the fluid from thesubstrate. Further, the N2/IPA vapor increases the wet ability of thesubstrates.

As detailed in FIG. 14, an exemplary process for drying wafers isdiscussed next. A wafer handler pulls wafer 100 from a FOUP and placedon the apparatus of FIG. 2. While wafer is in drying processes, N2/IPAvapor can be provided to the interface between wafers and DI water, andheated N2 can be used to provide additional drying of the wafer. As istypical, nitrogen is passed through a bubbler (not shown) that containsliquid IPA and is connected to the inlet manifold 313 of FIG. 12A. A SMR(Self-Metering Reservoir) bubbler can be used to generate the mixture.N2/IPA mixture also can be generated from atomizer nozzle chamber.

In FIG. 14, while the wafer 100 is being slowly spun, a layer of DIW isflooded on the surface of the wafer. Next, pressure regulator or MFC 311of zone 1 of the manifold 320 is actuated to turn the nozzlecorresponding to N₂/IPA zone 1 (372). The nitrogen and IPA vapor isprovided to the interfaces between the wafer 100 and DIW to increase thewet ability of the surface of the wafer 100 and to promote the removalof water and dry the wafer.

Next, pressure regulator or MFC 311 of zone 2 of the manifold 320 isactuated to turn the nozzle corresponding to N₂/IPA zone 2 (373). Thepressure regulator or MFC 311 of zone 3 of manifold 320 is then actuatedto turn the nozzle corresponding to N₂/IPA zone 3 (374). Next, thepressure regulator or MFC 311 of zone 4 of manifold 320 is actuated toturn the nozzle corresponding to N₂/IPA zone 4 (375). Finally, thepressure regulator or MFC 311 of zone 5 of manifold 320 is actuated toturn the nozzle corresponding to N₂/IPA zone 5 (376). Thus, the spinningof the wafer combined with selective activation of nozzles enable theDIW to be removed without staining the wafer with watermark, amongothers. The inner zone(s) can continuously flow the N2/IPA mixture orheated N2 while the outer zone(s) can perform dry processing.

The systems for drying of semiconductor wafers can be used inconjunction with processes such as post-CMP clean, Dry/wet Post-EtchResidue cleans (Polymer Removal), Photoresist Removal and surfacepreparation (FEOL & BEOL), Pre-Photo Lithography, Pre-Deposition cleanand dry, Back Side Metals Clean, Back Side Films Etch (Front side and/orbackside), Pre-Epi Clean, among others.

The spinning apparatus of FIGS. 2-4 can be used as stand-alone module,modulated platform systems or integrated with other processing systems.FIG. 15 illustrates an exemplary embodiment of a modular fabricationplatform having one or more cleaning/drying module.

In this embodiment, a processing module 400 such as the cleaner/dryer ofFIGS. 2-4 is used in conjunction with a robot 410 and a front openingunified pod (FOUP) 420. To ensure purity, a filter 442 is provided tomaintain the interior at a high level of cleanliness. The FOUP 420enables conveyance of wafers via a room of low cleanliness or theoutdoors. Hence, the FOUP 420 protects wafers from contamination withdust during conveyance. In one embodiment, a FOUP opener is disposed atthe interface between the interior and exterior of a clean room. TheFOUP opener includes a port plate having an opening portion, which canbe opened or closed, and a port door for opening/closing the openingportion. The FOUP 420 has a door which faces the opening portion of theport plate. When wafers are to be unloaded from a space maintained at ahigh level of cleanliness (a first control space) within the FOUP inorder to undergo processing steps, the FOUP door is opened. Unloadedwafers are robotically conveyed by the robot 410 within a wafer transferspace maintained at a high level of cleanliness similar to that in aprocessing chamber, and then transferred into the processing module 400.Processed wafers are returned from the processing module 400 to thespace within the FOUP 420 by the robot 410. Thus, wafers are movedthrough the opening portion of the port plate. When no wafer is moved,the opening portion of the port plate is closed by means of the portdoor.

Although the invention has been described with reference to particularembodiments, the description is only an example of the inventor'sapplication and should not be taken as limiting. Various adaptations andcombinations of features of the embodiments disclosed are within thescope of the invention as defined by the following claims.

1. A multi-zone shower head to dry a single wafer, comprising: a platehaving a plurality of nozzles positioned thereon, each of said nozzlesassigned to one of a plurality of processing zones for said wafer; and amanifold assembly coupled to each processing zone to control one or moreof said nozzles as a group in each processing zone, wherein the manifoldassembly can control each processing zone group independently.
 2. Theshower head of claim 1, wherein said plate further comprises: an upperplate having a plurality of inlets and chambers for each zone; and alower plate having a plurality of outlet chambers and its nozzles,wherein the chambers are separated from each other by an o-ring seal. 3.The shower head of claim 1, comprising a bottom plate having arestrictor section for each nozzle, the restrictor section adapted toallow an equalization of flow distribution to a bottom chamber beforedischarging to nozzles.
 4. The shower head of claim 1, wherein eachprocessing zone provides one or more flows of: an aqueous vapor, gases,a gas mixture and liquid.
 5. The shower head of claim 1, comprising aplurality of valves to control volume, flow rate, pressure or acombination thereof of each processing zone.
 6. The shower head of claim1, wherein said processing zones comprise a plurality of nitrogen andIPA vapor air zones.
 7. The shower head of claim 1, wherein each nozzleis angled outward approximately between 0 and 45 degrees.
 8. The showerhead of claim 1, wherein each zone is separated by a distanceapproximately between 0.5 inch and 2.0 inch.
 9. The shower head of claim1, wherein said processing zones comprise one or more of: concentricrings, rectangular rings, linear rings, and radial rings.
 10. The showerhead of claim 1, wherein said processing zones comprise one or more of:circular zones, square zones, triangular zones, rectangular zones andlinear zones.
 11. The shower head of claim 1, wherein an outerprocessing zone dries a wafer edge, wherein the outer processing zoneprovides a higher pressure than the inner processing zones, wherein theouter processing zone provides a flow covering an area near the wafer'sedge, the wafer's edge, and an area beyond the wafer's edge, and whereinthe outer processing zone provides a flow forming an outward anglebetween 0 and 45 degrees with the wafer's surface.
 12. A system to dry asingle wafer, comprising: a platform adapted to receive and rotate saidwafer; a multi-zone shower head positioned substantially parallel to thewafer, the multi-zone shower head comprising a plate having a pluralityof nozzles positioned thereon, each of said nozzles assigned to one of aplurality of processing zones for said wafer; and a manifold assemblycoupled to each processing zone to control one or more of said nozzlesas a group in each processing zone, wherein the manifold assembly cancontrol each processing zone group independently.
 13. The system ofclaim 12, wherein said plate further comprises: an upper plate having aplurality of inlets and chambers for each zone; and a lower plate havinga plurality of outlet chambers and its nozzles, wherein the chambers areseparated from each other by an o-ring seal.
 14. The system of claim 12,wherein each processing zone provides one or more flows of: an aqueousvapor, gases, a gas mixture and liquid.
 15. The system of claim 12,comprising a plurality of valves to control volume, flow rate, pressureor a combination thereof of each processing zone.
 16. The system ofclaim 12, wherein each nozzle is angled outward approximately between 0and 45 degrees.
 17. The system of claim 12, wherein an outer processingzone of the multi-zone shower head dries a wafer edge, wherein the outerprocessing zone provides a higher pressure than the inner processingzones, wherein the outer processing zone provides a flow covering anarea near the wafer's edge, the wafer's edge, and an area beyond thewafer's edge, and wherein the outer processing zone provides a flowforming an outward angle between 0 and 45 degrees with the wafer'ssurface.
 18. The system of claim 12, wherein said platform generates acentrifugal force during wafer rotation to urge an aqueous solutiontoward a wafer edge.
 19. The system of claim 18, wherein the aqueoussolution is distilled water (DIW) and wherein the DIW is rinsed toremove any chemical residues on the wafer.
 20. The system of claim 12,wherein each processing zone flows N₂/isopropyl alcohol (IPA) mixture orheated nitrogen during wafer rotation to evaporate residual thin film onthe wafer and to prevent water mark on the wafer.